1.

国際会議録
国際会議録
1. Optically Detected Wagnetic Resotrance Studies of Non-Radiative Recombination Centres in 6H SiC
Son,N.T. ; Wagner,Mt. ; Sorman,E. ; Chen,W.M. ; Monemar,B. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.599-602,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. A deep photoluminescence band in 4H SiC related to the silicon vacancy
Sorman,E. ; Son,N.T. ; Chen,W.M. ; Hallin,C. ; Lindstrom,J.L. ; Janzen,E.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.685-690,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
3.

国際会議録
国際会議録
3. A Metastable Selenium-Related Center in Silicon
Henry,A. ; Sorman,E. ; Andersson,S. ; Chen,W.M. ; Monemar,B. ; Janzen,E.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.159-164,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147
4.

国際会議録
国際会議録
4. The Neutral Silicon Vacancy in 6H and 4H SiC
Sorman,E. ; Chen,W.M. ; Son,N.T. ; Hallin,C. ; Lindstrom,J.L. ; Monemar,B. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.473-476,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268