1.

国際会議録
国際会議録
1. A Self-Aligned Silicide Process Utilizing Ion Implants For Reduced Silicon Consumption And Control Of The Silicide Formation Temperature
Cohen, G.M. ; Cabral, C., Jr. ; Lavoie, C. ; Solomon, P.M. ; Guarini, K.W. ; Chan, K.K. ; Roy, R.A.
出版情報: Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.35-40,  2002.  Warrendale.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 716
2.

国際会議録
国際会議録
2. A Self-Aligned Silicide Process for Thin Silicon-on-Insulator MOSFETs and Bulk MOSFETs With Shallow Junctions
Cohen, G.M. ; Cabral, C., Jr. ; Lavoie, C. ; Solomon, P.M. ; Guarini, K.W. ; Chan, K.K. ; Roy, R.A.
出版情報: Materials issues in novel si-based technology : symposium held November 26-28, 2001, Boston, Massachusetts, U.S.A..  pp.89-94,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 686
3.

国際会議録
国際会議録
3. Cw argon ion laser annealed B and as implanted diodes in oxide defined silicon devices
Sedgwick, T.O. ; Solomon, P.M. ; Vollmer, H.J.
出版情報: Laser and electron-beam solid interactions and materials processing : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A..  pp.337-343,  1981.  New York.  North Holland
シリーズ名: Materials Research Society symposia proceedings
シリーズ巻号: 1