1.

国際会議録
国際会議録
1. SILICON CONSUMPTION DURING SELF-ALIGNED TITANIUM SILICIDE FORMATION ON SHALLOW JUNCTIONS
Smith, P.L. ; Osburn, C.M. ; Wen, D.S. ; McGuire, G.
出版情報: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.299-306,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 160
2.

国際会議録
国際会議録
2. ION IMPLANTATION INDUCED EFFECTS AT POLYSILICON GATE FEATURE EDGES
Stinson, M.G. ; Smith, P.L. ; Osburn, C.M.
出版情報: Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.733-738,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 157
3.

国際会議録
国際会議録
3. FORMATION MECHANISM OF EPITAXIAL CoSi2 FILMS ON (001) Si USING Ti-Co BIMETALLIC LAYER SOURCE MATERIALS
Hsia, S.L. ; Tan, T.Y. ; Smith, P.L. ; McGuire, G.E.
出版情報: Evolution of surface and thin film microstructure : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.603-608,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 280