1.

国際会議録
国際会議録
1. The Role of Nitrogen-Induced Localization and Defects in InGaAsN (= 2 N):Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition
Kurtz, Steven R. ; Allerman, A.A. ; Klem, J.F. ; Sieg, R.M. ; Seager, C.H. ; Jones, E.D.
出版情報: Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A.  pp.21-28,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 692
2.

テクニカルペーパー
テクニカルペーパー
2. Study of InGaAs Based MODEFET Structures Using Variable Angle Spectroscopic Ellipsometry
Alterovitz, S.A. ; Sieg, R.M. ; Yao, H.D. ; Snyder, P.G. ; Woollam, J.A. ; Pamulapati, J. ; Bhattacharya, P.K. ; Sekula-Moise, P.A.
出版情報: NASA Technical Reports.  (NASA-TM-103792),  pp.1-13,  1991.  National Aeronautics and Space Adminstration
3.

テクニカルペーパー
テクニカルペーパー
3. A New Technique for Oil Backstreaming Contamination Measurements
Alterovitz, S.A. ; Speier, H.J. ; Sieg, R.M. ; Drotos, M.N. ; Dunning, J.E.
出版情報: NASA Technical Reports.  (NASA-TM-105312),  pp.1-13,  1991.  National Aeronautics and Space Adminstration