1.

国際会議録
国際会議録
1. The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
Rost, H.J. ; Schmidbauer, M. ; Siche, D.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.9-14,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
Siche, D. ; Albrecht, M. ; Doerschel, J. ; Irmscher, K. ; Rost, H. J. ; Rossberg, M. ; Schulz, D.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.39-42,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
3.

国際会議録
国際会議録
3. Source Material Related Distribution of Defects in 6H-SiC Single Crystals
Rost, H.-J ; Siche, D. ; Dolle, J. ; Schulz, D. ; Wollweber, J.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.263-266,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
4.

国際会議録
国際会議録
4. Morphology of Sublimation Grown 6H-SiC(000-1) Surfaces
Schulz, D. ; Dolle, J. ; Rost, H.-J ; Siche, D. ; Wollweber, J.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.243-246,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
5.

国際会議録
国際会議録
5. Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT
Schulz, D. ; Irmscher, K. ; Dolle, J. ; Eiserbeck, W. ; Muller, T. ; Rost, H. -J. ; Siche, D. ; Wagner, G. ; Wollweber, J.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.87-90,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
6.

国際会議録
国際会議録
6. Investigation of Silicon Carbide Physical Vapor Transport Growth on the C-Terminated Face of 6H Seeds
Schulz, D. ; Doerschel, J. ; Irmscher, K. ; Rost, H.-J. ; Siche, D. ; Wollweber, J.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
7.

国際会議録
国際会議録
7. Growth of 3C SiC Single Crystals from Convection Dominated Melts
Wollweber, J. ; Chevrier, V. ; Siche, D. ; Duffar, Th.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.119-124,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
8.

国際会議録
国際会議録
8. Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals
Wollweber, J. ; Rost, H.-J. ; Schulz, D. ; Siche, D.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.63-66,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
9.

国際会議録
国際会議録
9. Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
Rost, H.-J. ; Doerschel, J. ; Schulz, D. ; Siche, D. ; Wollweber, J.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.67-70,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
10.

国際会議録
国際会議録
10. Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
Rost, H.-J. ; Irmscher, K. ; Doerschel, J. ; Siche, D. ; Schulz, D. ; Wollweber, J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.91-94,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436