1.

国際会議録
国際会議録
1. Al₂O₃ as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD
Nola Li ; Shen-Jie Wang ; William E. Fenwick ; Andrew Melton ; Chung-Lung Huang ; Zhe Chuan Feng ; Christopher Summers ; Muhammad Jamil ; Ian Ferguson
出版情報: Zinc oxide and related materials--2009 : symposium held November 30-December 3, 2009, Boston, Massachusetts, USA.  pp.179-184,  2010.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 1201
2.

国際会議録
国際会議録
2. MOCVD Growth of High Hole Concentration (>2x10¹⁹ cm⁻³) P-Type InGaN for Solar Cell Application
Andrew Melton ; Hongbo Yu ; Omkar Jani ; Balakrishnam R. Jampana ; Shen-Jie Wang ; Shalini Gupta ; John Buchanan ; William E. Fenwick ; Ian T. Ferguson
出版情報: Photovoltaic materials and manufacturing issues : symposium held December 2-4, 2008, Boston, Massachusetts, U.S.A..  pp.89-94,  2009.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 1123