1.

国際会議録
国際会議録
1. The influence of the sapphire substrate on the temperature dependence of the GaN bandgap
Kruger, J. ; Shapiro, N. ; Subramanya, S. ; Kim, Y. ; Siegle, H. ; Perlin, P. ; Weber, E. R. ; Wong, W. S. ; Sands, T. ; Cheung, N. W. ; Molnar, R. J.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.289-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572
2.

国際会議録
国際会議録
2. Carrier Recombination in InGaN nanostructures: carrier localization in quantum-dots carrier separation by quantum-confined Stark effect
Shapiro, N. ; Feick, H. ; Weber, E.R.
出版情報: 10th International Symposium on Nanostructures: Physics and Technology.  pp.558-558,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5023