1.

国際会議録
国際会議録
1. Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room Temperature
Semond, F. ; Byrne, D. ; Natali, F. ; Leroux, M. ; Massies, J. ; Antoine-Vincent, N. ; Vasson, A. ; Disseix, P. ; Leymarie, J.
出版情報: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.613-618,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 798
2.

国際会議録
国際会議録
2. Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE
Sanchez, A.M. ; Ruterana, P. ; Vennegues, P. ; Semond, F. ; Pacheco, F.J. ; Molina, S.I. ; Garcia, R. ; Sanchez-Garcia, M.A. ; Calleja, E.
出版情報: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.157-162,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 743
3.

国際会議録
国際会議録
3. Cubic SiC Surface Structure Studied by X-Ray Diffraction
D'Angelo, M. ; Enriquez, H. ; Aristov, V.Yu. ; Soukiassian, P. ; Renaud, G. ; Barbier, A. ; Chiang, S. ; Semond, F. ; Di Cioccio, L. ; Billon, T.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.571-574,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
4.

国際会議録
国際会議録
4. From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization
Leroux, M. ; Lahreche, H. ; Semond, F. ; Lauegt, M. ; Feltin, E. ; Schnell, N. ; Beaumont, B. ; Gibart, P. ; Massies, J.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.795-798,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356