1.

国際会議録
国際会議録
1. Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
Wellmann, P. J. ; Bickermann, M. ; Hofmann, D. ; Kadinski, L. ; Selder, M. ; Straubinger, T. L. ; Winnacker, A.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.71-74,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
2.

国際会議録
国際会議録
2. Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Straubinger, T. L. ; Bickermann, M. ; Grau, M. ; Hofmann, D. ; Kadinski, L. ; Muller, S. G. ; Selder, M. ; Wellmann, P. J. ; Winnacker, A.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.39-42,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
3.

国際会議録
国際会議録
3. Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth
Selder, M. ; Kadinski, L. ; Durst, F. ; Straubinger, T. L. ; Hofmann, D. ; Wellmann, P. J.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.31-34,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
4.

国際会議録
国際会議録
4. Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
Wellmann, P.J. ; Hofmann, D. ; Kadinski, L. ; Selder, M. ; Straubinger, T.L. ; Winnacker, A.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.11-14,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
5.

国際会議録
国際会議録
5. Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
Schmitt, E. ; Rasp, M. ; Weber, A.-D. ; Koelbl, M. ; Eckstein, R. ; Kadinski, L. ; Selder, M.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.15-20,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
6.

国際会議録
国際会議録
6. Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals
Selder, M. ; Kadinski, L. ; Durst, F. ; Straubinger, T.L. ; Wellmann, P.J. ; Hofmann, D.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.65-68,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
7.

国際会議録
国際会議録
7. Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling
Wellmann, P.J. ; Herro, Z. ; Selder, M. ; Durst, F. ; Pusche, R. ; Hundhausen, M. ; Ley, L. ; Winnacker, A.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.9-12,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436