1.

国際会議録
国際会議録
1. CVD Growth Mechanism of 3C-SiC on Si Substrates
Ishida,Y. ; Takahashi,T. ; Okumura,H. ; Yoshida,S. ; Sekigawa,T.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.183-186,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
Takahashi,T. ; Ishida,Y. ; Okumura,H. ; Yoshida,S. ; Sekigawa,T.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.207-210,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268