1.

国際会議録
国際会議録
1. Boron Compensation of 6H Silicon Carbide
Mazzola,M.S. ; Saddow,S.E. ; Schoner,A.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.119-122,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC
Persson,P.O.A. ; Wahab,Q. ; Hultman,L. ; Nordell,N. ; Schoner,A. ; Rottner,K. ; Olsson,E. ; Linnarsson,M.K.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.413-416,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC
Linnarsson,M.K. ; Janson,M. ; Schoner,A. ; Nordell,N. ; Karlsson,S. ; Svensson,B.G.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.761-764,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
4.

国際会議録
国際会議録
4. Studies of the Ambient Dependent Inversion Capacitance of Catalytic Metal-Oxide-Silicon Carbide Devices Based on 6H- and 4H-SiC Material
Tobias,P. ; Baranzahi,A. ; Lundstrom,I. ; Schoner,A. ; Rottner,K. ; Karlsson,S. ; Martensson,P. ; Spetz,A.Lloyd
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1089-1092,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
5.

国際会議録
国際会議録
5. Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC
Gotz,W. ; Schoner,A. ; Pensl,G. ; Suttrop,W. ; Choyke,W.J. ; Stein,R. ; Leibenzeder,S.
出版情報: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.495-500,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 117-118
6.

国際会議録
国際会議録
6. Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competiticn Epitaxy
Frank,T. ; Troffer,T. ; Pensl,G. ; Nordell,N. ; Karlsson,S. ; Schoner,A.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.681-684,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
7.

国際会議録
国際会議録
7. Nitrogen Donors,Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide(4H-SiC)
Gotz,W. ; Schoner,A. ; Suttrop,W. ; Pensl,G. ; Choyke,W.J. ; Stein,R.A. ; Leibenzeder,S.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.69-74,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147
8.

国際会議録
国際会議録
8. Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
Troffer,T. ; Pensl,G. ; Schoner,A. ; Henry,A. ; Hallin,C. ; Kordina,O. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.557-560,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268