1.

国際会議録
国際会議録
1. The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
Rost, H.J. ; Schmidbauer, M. ; Siche, D.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.9-14,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Shape, Strain and Spatial Correlation of InP/In0.48Ga0.52P Quantum Dot Multilayers
Schmidbauer, M. ; Hatami, F. ; Schaefer, P. ; Hanke, M. ; Wiebach, Th. ; Niehus, H. ; Masselink, W. T. ; Koehler, R.
出版情報: Semiconductor quantum dots II : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 642
3.

国際会議録
国際会議録
3. Crystalline Si Films Grown Epitaxially At Low Temperatures By ECR-PECVD
Christiansen, S. ; Fuhs, W. ; Nerding, M. ; Platen, J. ; Schmidbauer, M. ; Selle, B.
出版情報: Amorphous and heterogeneous silicon thin films - 2000 : symposium held April 24-28, 2000, San Francisco, California, U.S.A..  pp.A8.6-,  2001.  Warrendale.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 609