The Influence of Fluorine on Various MOS Devices
- 著者名:
Innertsberger, G. Jurk, R. Felsner, J. Kakoschke, R. Yuwono, B. Schlosser, T. Krautschneider, W. Gschwandtner, A. - 掲載資料名:
- Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 567
- 発行年:
- 1999
- 開始ページ:
- 589
- 出版情報:
- Warrendale, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994744 [1558994742]
- 言語:
- 英語
- 請求記号:
- M23500/567
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Gate-Prior-to-Isolation CMOS Technology With Through-the-Gate-Implanted Ultrathin Gate Oxides
MRS - Materials Research Society |
Society of Plastics Engineers, Inc. (SPE) |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
Narosa Publishing House |
ESA Publications Division |
Electrochemical Society |
Electrochemical Society |
6
国際会議録
INTEGRATED PREDEPOSITION CLEANING/PASSIVATION OF Si SURFACES FOR MOS DEVICES WITH Si02/Si INTERFACES
Electrochemical Society |
MRS - Materials Research Society |