1.

国際会議録
国際会議録
1. Increased Growth Rate in a SiC CVD Reactor Using HCI as a Growth Additive
Myers, R. ; Kordina, O. ; Shishkin, Z. ; Rao, S. ; Everly, R. ; Saddow, S. E.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.73-76,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
2.

国際会議録
国際会議録
2. Structure and Morphology of 4H-SiC Wafer Surfaces after H2-Etching
Soubatch, S. ; Saddow, S. E. ; Rao, S. P. ; Lee, W. Y. ; Konuma, M. ; Starke, U.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.761-764,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
3.

国際会議録
国際会議録
3. Characterization of Single-Crystal 3C-SiC Epitaxial Layers on Si Substrates
Saddow, S. E. ; Okhusyen, M. E. ; Mazzola, M. S. ; Dudley, M. ; Huang, X. R. ; Huang, W. ; Su, H. ; Shamsuzzoha, M. ; Lo, Y. H.
出版情報: III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.107-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 535
4.

国際会議録
国際会議録
4. Preliminary Characterization of GaN MBE Epitaxial Layers Grown on Nanoporous 6H-SiC Substrates
Wolan, J.T. ; Gopalkrishna, A. ; Saddow, S. E. ; Mynbaeu, M. ; Morkoc, H. ; Reshchikov, M. ; Yun, F. ; Dmitriev, V. ; Wood, C. E. C.
出版情報: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 639
5.

国際会議録
国際会議録
5. Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC
Los, A. V. ; Mazzola, M. S. ; Saddow, S. E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.745-748,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
6.

国際会議録
国際会議録
6. J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600℃
Bergamini, F. ; Rao, S. P. ; Saddow, S. E. ; Nipoti, R.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.629-632,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
7.

国際会議録
国際会議録
7. High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching
Saddow, S. E. ; Williams, J. ; Isaacs-Smith, T. ; Capano, M. ; Cooper, J. A. ; Mazzola, M. S. ; Hsieh, A. J. ; Casady, J. B.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.901-904,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
8.

国際会議録
国際会議録
8. Preliminary Investigation of SiC on Silicon for Biomedical Applications
Carter, G. E. ; Casady, J. B. ; Bonds, J. ; Okhuysen, M. E. ; Scofield, J. D. ; Saddow, S. E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1149-1154,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
9.

国際会議録
国際会議録
9. 4H-SiC Device Scaling Development on Repaired Micropipe Substrates
Schattner, T. E. ; Casady, J. B. ; Smith, M. C. D. ; Mazzola, M. S. ; Dmitriev, V. ; Rentakova, S. V. ; Saddow, S. E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1203-1206,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
10.

国際会議録
国際会議録
10. Large Area 6H- and 4H-SiC Photoconductive Switches
Dogan, S. ; Yun, F. ; Roberts, C. B. ; Parish, J. ; Huang, D. ; Myers, R. E. ; Smith, M. ; Saddow, S. E. ; Ganguly, B. ; Morkoc, H.
出版情報: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.389-394,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 764