1.

国際会議録
国際会議録
1. 12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
S.G. Sundaresan ; C. Sturdevant ; M. Marripelly ; E. Lieser ; R. Singh
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.949-952,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
2.

国際会議録
国際会議録
2. Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates
J. Zhang ; G.Y. Chung ; E.K. Sanchez ; M.J. Loboda ; S.G. Sundaresan
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.137-140,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
3.

国際会議録
国際会議録
3. Hybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses
S.G. Sundaresan ; C. Sturdevant ; H. Issa ; M. Marripelly ; E. Lieser
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.945-948,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
4.

国際会議録
国際会議録
4. Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications
S.G. Sundaresan ; E. Lieser ; R. Singh
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1159-1162,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Growth of SiC Nanowires on Different Planes of 4H-SiC Substrates
R.V.K.G. Thirumalai ; B. Krishnan ; I. Levin ; A.V. Davydov ; S.G. Sundaresan
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1279-1282,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
6.

国際会議録
国際会議録
6. SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition
B. Krishnan ; S.P. Kotamraju ; S.G. Sundaresan ; Y. Koshka
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.187-192,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
7.

国際会議録
国際会議録
7. Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
G.Y. Chung ; M.J. Loboda ; S.G. Sundaresan ; R. Singh
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.905-908,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
8.

国際会議録
国際会議録
8. Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs
S.G. Sundaresan ; H. Issa ; D. Veeredy ; R. Singh
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1021-1028,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
9.

国際会議録
国際会議録
9. Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation
S.G. Sundaresan ; S. Jeliazkov ; B. Grummel ; R. Singh
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1001-1004,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780