1.

国際会議録
国際会議録
1. Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method
M. Noguchi ; T. Iwamatsu ; H. Amishiro ; H. Watanabe ; S. Nakata
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.437-440,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs
S. Nakata ; S.I. Kinouchi ; T. Sawada ; T. Oi ; T. Oomori
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.903-906,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
3.

国際会議録
国際会議録
3. Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy
K. Kawahara ; H. Watanabe ; N. Miura ; S. Nakata ; S. Yamakawa
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.403-406,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
4.

国際会議録
国際会議録
4. Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging
K. Konishi ; S. Yamamoto ; S. Nakata ; Y. Toyoda ; S. Yamakawa
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.342-345,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
5.

国際会議録
国際会議録
5. Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation
J. Hasegawa ; K. Konishi ; Y. Nakamura ; K. Ohtsuka ; S. Nakata
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.828-831,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
6.

国際会議録
国際会議録
6. Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD
K. Ebihara ; Y. Yamamoto ; Y. Nakaki ; S. Aya ; S. Nakata
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.791-794,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
7.

国際会議録
国際会議録
7. Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode
S. Yamamoto ; Y. Nakao ; N. Tomita ; S. Nakata ; S. Yamakawa
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.951-954,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
8.

国際会議録
国際会議録
8. Preparation of Apatite-type Lanthanum Silicate Supported Catalysts for Pollutant Gas Purification
S. Kato ; T. Yoshizawa ; K. Yokoyama ; K. Kosagawa ; M. Ogasawara ; S. Nakata ; T. Wakabayashi ; Y. Nakahara
出版情報: Science and technology in catalysis 2006 : proceedings of the fifth Tokyo Conference on Advanced Catalytic Science and Technology, Tokyo, July 23-28, 2006.  pp.617-618,  2007.  Tokyo.  Elsevier
シリーズ名: Studies in surface science and catalysis
シリーズ巻号: 172
9.

国際会議録
国際会議録
9. Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode
S. Hino ; H. Hatta ; K. Sadamatsu ; Y. Nagahisa ; S. Yamamoto ; T. Iwamatsu ; Y. Yamamoto ; M. Imaizumi ; S. Nakata ; S. Yamakawa
出版情報: Silicon Carbide and Related Materials 2016.  pp.477-482,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897
10.

国際会議録
国際会議録
10. The Effect of Incomplete Ionization on SiC Devices during High Speed Switching
K. Ebihara ; K. Kawahara ; H. Watanabe ; S. Nakata ; S. Yamakawa
出版情報: Silicon Carbide and Related Materials 2016.  pp.467-470,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897