A thick GaN growth using GaN/Si(111) template by hydride vapor phase epitaxy (HVPE)
- 著者名:
- D. S. Kim ( LG Siltron, South Korea )
- H. J. Lee ( LG Siltron, South Korea )
- Y. J. Kim ( LG Siltron, South Korea )
- S. K. Jong ( Advanced Photonics Research Institute, South Korea )
- D. K. Lee ( LG Siltron, South Korea )
- 掲載資料名:
- Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6894
- 発行年:
- 2008
- 開始ページ:
- 689406-1
- 終了ページ:
- 689406-9
- 総ページ数:
- 9
- 出版情報:
- Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819470690 [0819470694]
- 言語:
- 英語
- 請求記号:
- P63600/6894
- 資料種別:
- 国際会議録
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