Development of a High-Growth Rate 3C-SiC on Si CVD Process

Development of a High-Growth Rate 3C-SiC on Si CVD Process

著者名:

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

79

終了ページ:

84

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

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2 国際会議録 Growth of 3C-SiC on Si Molds for MEWS Applications Reyes, M., Waits, M., Harvey, S., Shishkin, Y., Geil, B.R., Wolan, J.T., Saddow, S.E. Trans Tech Publications	8 国際会議録 Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes Melnychuk, G., Koshka, Y., Yingquan, S., Mazzola, M., Pittman, C.U., Jr. Trans Tech Publications
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