1.

国際会議録
国際会議録
1. High Temperature, High Current, 4H-SiC Accu-DMOSFET
Singh, R. ; Ryu, S. -H. ; Palmour, J. W.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1271-1274,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
2.

国際会議録
国際会議録
2. 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
Agarwal, A. ; Ryu, S. -H. ; Singh, R. ; Kordina, O. ; Palmour, J. W.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1387-1390,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
3.

国際会議録
国際会議録
3. High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation
Ryu, S. -H. ; Singh, R. ; Palmour, J. W.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1427-1430,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)