1.

国際会議録
国際会議録
1. Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation
Rutsch, G. ; Devaty, R. P. ; Choyke, W. J. ; Langer, D. W. ; Rowland, L. B. ; Niemann, E. ; Wischmeyer, F.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.733-736,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
2.

国際会議録
国際会議録
2. A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures
Jang, T. ; Rutsch, G. ; Odekirk, B. ; Porter, L. M.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1001-1004,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)