1.

国際会議録
国際会議録
1. New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures
Olafsson, H.OE. ; Sveinbjornsson, Einar ; Rudenko, T.E. ; Kilchytska, V.I. ; Tyagulski, I.P. ; Osiyuk, I.N.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1001-1004,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
2.

国際会議録
国際会議録
2. Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique
Lysenko, V.S. ; Osiyuk, I.P. ; Rudenko, T.E. ; Tyagulski, I.P. ; Sveinbjoernsson, Einar ; Olafsson, H.Oe.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.479-482,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
3.

国際会議録
国際会議録
3. Modeling and measurements of generation and recombination currents in thin-film SOI gated-diodes
Rudenko, T.E. ; Kilchytska, V.I.
出版情報: Progress in SOI structures and devices operating at extreme conditions.  pp.249-262,  2002.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 58
4.

国際会議録
国際会議録
4. Properties of SOI MOSFET's obtained on multilayer buried dielectrics
Lysenko, V.S. ; Nazarov, A.N. ; Rudenko, T.E. ; Rudenko, A.N. ; Kilchitskaya, V.I. ; Givargizov, E.I. ; Limanov, A.B.
出版情報: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.324-332,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-11
5.

国際会議録
国際会議録
5. Characterization of carrier generation in thin-film SOI devices by reverse gated-diode technique and its application at high temperatures
Rudenko, T.E. ; Kilchytska, V.I. ; Flandre, D.
出版情報: Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment.  pp.247-254,  2005.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 185
6.

国際会議録
国際会議録
6. New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures
Olafsson, H.O. ; Sveinbjornsson, E.O. ; Rudenko, T.E. ; Kilchytska, V.I. ; Tyagulski, I.P. ; Osiyuk, I.N.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1001-1004,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
7.

国際会議録
国際会議録
7. A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface
Olafsson, H.O. ; Sveinbjornsson, E.O. ; Rudenko, T.E. ; Kilchytska, V.I. ; Tyagulski, I.P. ; Osiyuk, I.N.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.547-550,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436