1.

国際会議録
国際会議録
1. Surface Pit Formation and Time Dependent Growth During Hydrogen Annealing of Cz Si Wafers
Bae, K.-M. ; Rozgonyi, G. ; Shin, J.-S. ; Oh, H.-S.
出版情報: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.292-303,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-13
2.

国際会議録
国際会議録
2. A Vacancy/Oxygen Based Model Describing Radial Distribution of Voids, OSF-Ring, and AOP in Ring Structure of Cz Silicon Crystals
Bae, K.-M. ; Rozgonyi, G. ; Kim, J.-R. ; Oh, H.-S.
出版情報: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.147-157,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-13
3.

国際会議録
国際会議録
3. Crystal originated particles (COPs), bulk defects including the OSF ring, gate oxide integrity (GOI), and DRAM yield
Rozgonyi, G. ; Tamatsuka, M. ; Bae, K.-M. ; Gonzales, F.
出版情報: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.153-172,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-22
4.

国際会議録
国際会議録
4. In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K
Cho, C. R. ; Brown, R. A. ; Kononchuk, O. ; Yarykin, N. ; Rozgonyi, G. ; Zuhr, R.
出版情報: Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.73-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 532
5.

国際会議録
国際会議録
5. Finite Element Analysis of Elastic and Plastic Deformation During Growth of Si1-xGex/Si Heterostructures
Karoui, F. ; Sahtout, Karoui A. ; Rozgonyi, G.
出版情報: Nanoscale materials and modeling -- relations among processing, microstructure and mechanical properties : symposium held April 13-16, 2004, San Francisco, California, U.S.A..  pp.43-48,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 821
6.

国際会議録
国際会議録
6. Effect of Oxygen and Nitrogen Doping on Mechanical Properties of Silicon Using Nanoindentation
Karoui, A. ; Rozgonyi, G. ; Ciszek, T.
出版情報: Nanoscale materials and modeling -- relations among processing, microstructure and mechanical properties : symposium held April 13-16, 2004, San Francisco, California, U.S.A..  pp.123-128,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 821
7.

国際会議録
国際会議録
7. Oxygen and carbon precipitation in crystalline sheet silicon: Depth profiling by infrared spectroscopy, EBIC, and preferential etching
Lu, J. ; Rozgonyi, G. ; Rand, J. ; Jonczyk, R.
出版情報: Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France.  pp.81-92,  2005.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-10
8.

国際会議録
国際会議録
8. Strained- Si/SiGe/Si heterostructures : Nanos cale structural, chemical and electrical characterization (invited paper)
Rozgonyi, G. ; Lu, J. ; Zhao, W. ; Zhang, R. ; Chaumont, M.
出版情報: Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France.  pp.30-41,  2005.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-10
9.

国際会議録
国際会議録
9. Nonlinear Transient Finite Element Analysis of the Relaxation Mechanisms in Strained Silicon Grown on SiGe Virtual Substrate
Sahtout Karoui, F. ; Karoui, A. ; Rozgonyi, G.
出版情報: Thin films : stresses and mechanical properties XI : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.409-416,  2005.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 875
10.

国際会議録
国際会議録
10. In-Situ Observations of Point Defect Generation and Complexing During Electron Beam Irradiation of Nitrogen Doped Czochralski Silicon
Stoddard, N. ; Karoui, A. ; Duscher, G. ; Kvit, A. ; Rozgonyi, G.
出版情報: High purity silicon VII : proceedings of the international symposium.  pp.347-356,  2002.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-20