1.

国際会議録
国際会議録
1. EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V
von Bardeleben, H.J. ; Cantin, J.L. ; Reshanov, S.A. ; Rastegaev, V.P.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.507-510,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
2.

国際会議録
国際会議録
2. A Simple Model of 3d Impurities in Cubic Silicon Carbide
Parfenova, I.I. ; Yuryeva, E.I. ; Reshanov, S.A. ; Rastegaev, V.P. ; Ivanovskii, A.L.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.515-518,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
3.

国際会議録
国際会議録
3. Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport
Reshanov, S.A. ; Rastegaev, V.P. ; Tairov, Yuri M.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.53-56,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356