1.

国際会議録
国際会議録
1. Effective Lifetime of Minority Carriers in Silicon: the Role of Heat- and Hydrogen Plasma Treatments
Ulyashin, A. ; Simoen, E. ; Camel, L. ; De Wolf, S. ; Dekkers, H. ; Rafi, J.M. ; Beaucarne, G. ; Poortmans, J. ; Claeys, C.
出版情報: High purity silicon VIII : proceedings of the international symposium.  pp.334-345,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-05
2.

国際会議録
国際会議録
2. Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs
Martino, J.A. ; Rafi, J.M. ; Mercha, A. ; Simoen, E. ; Claeys, C.
出版情報: High purity silicon VIII : proceedings of the international symposium.  pp.346-356,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-05
3.

国際会議録
国際会議録
3. Degradation of Deep Submicron Partially Depleted SOI CMOS iransistors tinder MEV Proton or Gamma Irradiation
Simoen, E. ; Rafi, J.M. ; Mercha, A. ; De Meyer, K. ; Claeys, C. ; Kokkoris, M. ; Kossionides, E. ; Fanourakis, G. ; Mohhaindzadeh, A.
出版情報: Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium.  pp.18-27,  2003.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-9
4.

国際会議録
国際会議録
4. Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon
Rafi, J.M. ; Simoen, E. ; Claeys, C. ; Ulyashin, A. ; Job, R. ; Fahrner, W. ; Versluys, J. ; Clauws, P. ; Lozano, M. ; Campabadal, F.
出版情報: Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah.  pp.96-105,  2003.  Pennington, NJ.  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5133
5.

国際会議録
国際会議録
5. Radiation damage in deep submicron partially depleted SOI CMOS
Simoen, E. ; Rafi, J.M. ; Mercha, A. ; Serra-Gallifa, X. ; van Meer, H. ; De Meyer, K. ; Claeys, C. ; Kokkoris, M. ; Kossionides, E. ; Fanourakis, G.
出版情報: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.437-442,  2003.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-5
6.

国際会議録
国際会議録
6. Comparison Between 0.13 μm Partially-Depleted Silicon-On-Insulator Technology with Floating Body Operation at 300 K and 90 K
Pavanello, M.A. ; Martino, J.A. ; Mercha, A. ; Rafi, J.M. ; Simoen, E. ; Claeys, C. ; van Meer, H. ; De Meyer, K.
出版情報: Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium.  pp.205-212,  2002.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-8
7.

国際会議録
国際会議録
7. Low temperature Doping of Silicon by Hydrogen Plasma Treatments*
Job, R. ; Ulyashin, A.G. ; Ma, Y. ; Fahnwr, W.R. ; Simoen, E. ; Rafi, J.M. ; Claeys, C. ; Niedernostheide, F.J. ; Schulze, H.J.
出版情報: High purity silicon VII : proceedings of the international symposium.  pp.141-154,  2002.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-20