1.

国際会議録
国際会議録
1. Antimony Clustering Due To High-Dose Implantation
Kalyanaraman, Ramki ; Haynes, Tony E. ; Venezia, Vincent C. ; Jacobson, Dale C. ; Gossmann, Hans J. ; Rafferty, Conor S.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B8.5-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 610
2.

国際会議録
国際会議録
2. Calibration Of The Au Labeling Technique To Measure Vacancy Defects In Si
Kalyanaraman, Ramki ; Haynes, Tony E. ; Jacobson, Dale C. ; Gossmann, Hans J. ; Rafferty, Conor S.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B9.2-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 610
3.

国際会議録
国際会議録
3. Effects Of Nonmelt Excimer Laser Annealing On 5keV Boron Implanted in Silicon
Jaraiz, Martin ; Castrillo, Pedro ; Pinacho, Ruth ; Pelaz, Lourdes ; Barbolla, Juan ; Gilmer, George H. ; Rafferty, Conor S.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B10.5-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 610
4.

国際会議録
国際会議録
4. Junctions For Deep Sub-100 Nm MOS: How Far Will Ion Implantation Take Us?
Gossmann, Hans-Joachim L. ; Rafferty, Conor S. ; Keys, P. H.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B1.2-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 610