1.

国際会議録
国際会議録
1. Toward the ultimate storage device: the fabrication of an ultrahigh-density memory device with 193-nm lithography
Cirelli, R. A. ; Bude, J. ; Mansfield, W. M. ; Timp, G. L. ; Klemens, F. P. ; Watson, C. P. ; Weber, G. R. ; Sweeney, J R. ; Houlihan, F. M. ; Gabor, A. H. ; Baumann, F. ; Buonanno, M. ; Forsyth, G. F. ; Barr, D. ; Lee, T. C. ; Rafferty, C. S. ; Hutton, R. S. ; Timko, A. G. ; Hergenrother, J. ; Reichmanis, E. ; Harriott, L. R. ; Hillenius, S. J. ; Nalamasu, O.
出版情報: Microlithography 1999 : advances in resist technology and processing XVI : 15-17 March 1999, Santa Clara, California.  pp.295-305,  1999.  Bellingham, Wash., USA.  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3678
2.

国際会議録
国際会議録
2. MEASURING VACANCY DIFFUSIVITY AND VACANCY ASSISTED CLUSTERING BY NITRIDATION ENHANCED DIFFUSION OF Sb IN Si(100) DOPING SUPERLATTICES
Mogi, Toshiharu K. ; Gossmann, H.-J. ; Rafferty, C. S. ; Luftman, H. S. ; Unterwald, F. C. ; Boone, T. ; Thompson, Michael O. ; Poate, J. M.
出版情報: Evolution of thin film and surface structure and morphology : symposium held November 28-December 2, 1994, Boston, Massachusetts, USA.  pp.157-,  1995.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 355
3.

国際会議録
国際会議録
3. Atomistic Model of Transient-Enhanced Diffusion and Clustering of Boron in Silicon
Pelaz, L. ; Gilmer, G. H. ; Jaraiz, M. ; Gossmann, H-J. ; Rafferty, C. S. ; Eaglesham, D. J. ; Poate, J. M.
出版情報: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.341-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 469
4.

国際会議録
国際会議録
4. Shallow Boron Implant Activation
Fiory, A. T. ; Bourdelle, K. K. ; Agarwal, A. ; Gossmann, H-J. ; Rafferty, C. S.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.31-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 568
5.

国際会議録
国際会議録
5. Modelling of {311} Defects
Hobler, G. ; Rafferty, C. S.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.123-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 568
6.

国際会議録
国際会議録
6. Properties of Point-Defects in Si for Process Modeling
Gossmann, H. J. ; Rafferty, C. S. ; Stolk, P. A. ; Eaglesham, D. J. ; Gilmer, G. H. ; Poate, J. M. ; Vuong, H.-H. ; Mogi, T. K. ; Thompson, M. O.
出版情報: Modeling and simulation of thin-film processing : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.3-,  1995.  Pittsburgh.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 389