1.

国際会議録
国際会議録
1. Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
M. Syvajarvi ; N. Sritirawisarn ; R. Yakimova
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.195-198,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates
A.A. Lebedev ; V.V. Zelenin ; P.L. Abramov ; E.V. Bogdanova ; S.P. Lebedev ; D.K. Nel'son ; B.S. Razbirin ; M.P. Scheglov ; A.S. Tregubova ; M. Syvajarvi ; R. Yakimova
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.175-178,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC
J. Eriksson ; D. Puglisi ; R. Vasiliauskas ; A. Lloyd Spetz ; R. Yakimova
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.153-156,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
4.

国際会議録
国際会議録
4. Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates
V. Jokubavicius ; H.H. Huang ; S. Schimmel ; R. Liljedahl ; R. Yakimova
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.275-278,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
5.

国際会議録
国際会議録
5. Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy
J.W. Sun ; S. Kamiyama ; P. Wellmann ; R. Liljedahl ; R. Yakimova
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.315-318,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
6.

国際会議録
国際会議録
6. Features of Hot Hole Transport in 6H-SiC
V.I. Sankin ; P.P. Shkrebiy ; A.A. Lepneva ; A.G. Ostroumov ; R. Yakimova
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.307-310,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
7.

国際会議録
国際会議録
7. Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers
G. Manolis ; M. Beshkova ; M. Syväjärvi ; R. Yakimova ; K. Jarašiūnas
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.161-164,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
8.

国際会議録
国際会議録
8. Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates
J.W. Sun ; T. Robert ; V. Jokubavicius ; S. Juillaguet ; R. Yakimova
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.407-410,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
9.

国際会議録
国際会議録
9. Local Electrical Properties of the 4H-SiC(0001)/Graphene Interface
S. Sonde ; C. Vecchio ; F. Giannazzo ; R. Yakimova ; E. Rimini
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.769-776,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
10.

国際会議録
国際会議録
10. P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
P. Hens ; M. Syväjärvi ; F. Oehlschläger ; P.J. Wellmann ; R. Yakimova
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.85-88,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617