1.

国際会議録
国際会議録
1. Effects of reverse bias annealing and zero bias annealing on Ti/n-GaAs and Au/n-GaAs Schottky barriers containing hydrogen
Qin,G.G. ; Yuan,M.H. ; Jin,S.X. ; Chen,X.S. ; Wang,L.P.
出版情報: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.587-592,  1992.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 83-87
2.

国際会議録
国際会議録
2. Positron Lifetime Spectrum Measurement In Porous Silicon
Huang,Y.M. ; Qin,G.G. ; Yu,W.Z. ; Xiong,J.J.
出版情報: Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China.  Part1  pp.391-394,  1995.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 175-178
3.

国際会議録
国際会議録
3. Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects
Du,Y.C. ; Yan,M.X. ; Qin,G.G.
出版情報: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1021-1026,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 38-41
4.

国際会議録
国際会議録
4. Shifts and Splittings of three Palladium-Related Deep Levels in Silicon under Uniaxial Stresses and the Symmetries of their Corresponding Centers
Zhou,J. ; Wang,L. ; Yao,X.C. ; Qin,G.G.
出版情報: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.403-408,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 38-41