1.

国際会議録
国際会議録
1. Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEN, Contrast Simulation and Dislocation Core Reconstruction
Lancin, M. ; Regula, G. ; Douin, J. ; Idrissi, H. ; Ottaviani, L. ; Pichaud, B.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.379-382,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. INTERACTION OF SOLUTE In ATOMS WITH DISLOCATIONS IN LEC GaAs
Burle-Durbec, N. ; Rakotobe, A. ; Pichaud, B. ; Minari, F.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.591-596,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
3.

国際会議録
国際会議録
3. Trapping Mechanisms by Cavities for Metallic Impurities in Monocrystalline Silicon
Regula, G. ; El Bouayadi, R. ; Pichaud, B. ; Lancin, M. ; Ntsoenzok, E.
出版情報: High purity silicon VIII : proceedings of the international symposium.  pp.208-217,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-05
4.

国際会議録
国際会議録
4. DISLOCATIONS AS SINKS FOR SELF-INTERSTITIALS IN GOLD DOPED FLOAT ZONE SILICON
Mariano, B. ; Pichaud, B. ; Taylor, W. J. ; Yang, W.-S.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.81-86,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
5.

国際会議録
国際会議録
5. Residual Oxygen Determination in Silicon Epilayer, Comparison With FTIR Measurements
Degas, F. ; Blondiaux, G. ; Pichaud, B.
出版情報: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.185-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 483
6.

国際会議録
国際会議録
6. Interstitial Silicon Sink Efficiency of Dislocations Studied by Gold Diffusion in FZ and Cz Samples
Mariani, G. ; Pichaud, B. ; Yakimov, E.
出版情報: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.65-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 469
7.

国際会議録
国際会議録
7. Evolution Of Nucleation Sites And Bubble Precursors In Silicon As A Function Of Helium Implanted Dose
Liu, Changlong ; Delamare, R. ; Ntsoenzok, E. ; Regula, G. ; Pichaud, B. ; Veen, A. van
出版情報: Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.229-234,  2002.  Warrendale, Pa.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 719
8.

国際会議録
国際会議録
8. Evolution of Defects Induced by High Energy He Implantation in Gold-Diffused Silicon
Bouayadi, R. El ; Regula, G. ; Pichaud, B. ; Lancin, M. ; Simon, J.J. ; Ntsoenzok, E.
出版情報: Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A..  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 669
9.

国際会議録
国際会議録
9. Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (1120) 4H-SiC
Idrissi, H. ; Lancin, M. ; Douin, J. ; Regula, G. ; Pichaud, B.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.299-302,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
10.

国際会議録
国際会議録
10. Thermal growth of He-cavities in Si studied by cascade implantation
Ntsoenzok, E. ; Bouayadi, R.El ; Regula, G. ; Pichaud, B. ; Ashok, S.
出版情報: Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.461-466,  2005.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 864