1.

国際会議録
国際会議録
1. Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Chassagne, T. ; Ferro, G. ; Wang, H. ; Stoemenos, Y. ; Peyre, H. ; Contreras, S. ; Camassel, J. ; Monteil, Y. ; Ghyselen, B.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.343-346,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
2.

国際会議録
国際会議録
2. From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks
Pernot, J. ; Camassel, J. ; Peyre, H. ; Contreras, S. ; Robert, J.L.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.403-406,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
3.

国際会議録
国際会議録
3. Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction
Camassel, J. ; Peyre, H. ; Brink, D.J. ; Zielinski, M. ; Blanque, S. ; Mestres, N. ; Godignon, P.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.941-944,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
4.

国際会議録
国際会議録
4. Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Chassagne, T. ; Ferro, G. ; Wang, H. ; Stoemenos, Y. ; Peyre, H. ; Contreras, S. ; Camassel, J. ; Monteil, Y. ; Ghyselen, B.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.343-346,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
5.

国際会議録
国際会議録
5. Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"
Chassagne, T. ; Leycuras, A. ; Balloud, C. ; Arcade, P. ; Peyre, H. ; Juillaguet, S.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.273-276,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460