EVIDENCE FOR A KICKOUT MECHANISM FOR GERMANIUM DIFFUSION IN SILICON
- 著者名:
- 掲載資料名:
- Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 1993-6
- 発行年:
- 1993
- 開始ページ:
- 167
- 終了ページ:
- 175
- 総ページ数:
- 9
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566770644 [1566770645]
- 言語:
- 英語
- 請求記号:
- E23400/930578
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
Electrochemical Society |
MRS - Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |
9
国際会議録
NVITED: POINT DEFECT BASED MODELING OF DOPANT DIFFUSION AND TRANSIENT ENHANCED DIFFUSION IN SILICON
Electrochemical Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |