1.

国際会議録
国際会議録
1. Electronic nature of neutral zinc in silicon:FTIR-absorption,uniaxial stress measurements
Kaufmann,B. ; Dornen,A. ; Lang,M. ; Pensl,G. ; Grilnebaum,D. ; Stolwijk,N.
出版情報: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.197-202,  1992.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 83-87
2.

国際会議録
国際会議録
2. Observation of Five Additional Thermal Donors and Kinetics of Thermal Donor Formation and Annihilation at Temperatures above 500｡？in Czochralski-Grown Si
Gotz,W. ; Pensl,G. ; Zulehner,W.
出版情報: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.213-218,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 117-118
3.

国際会議録
国際会議録
3. High Resolution Photoemission Study of the 6H-SiC/SiO2 Interface
Mattern,B. ; Bassler,M. ; Pensl,G. ; Ley,L.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.375-378,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
4.

国際会議録
国際会議録
4. The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers
Newman,R.C. ; Davidson,B.R. ; Addinall,R. ; Murray,R. ; Emmert,J.W. ; Wagner,J. ; Gotz,W. ; Roos,G. ; Pensl,G.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.229-234,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147
5.

国際会議録
国際会議録
5. Hall Effect,DLTS and Optical Investigations on the Intrinsic 78/203 meV Acceptor in GaAs
Roos,G. ; Schbner,A. ; Pensl,G. ; Krambrock,K. ; Meyer,B.K. ; Spaeth,J.-M. ; Wagner,J.
出版情報: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part2  pp.951-956,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 38-41
6.

国際会議録
国際会議録
6. Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC
Gotz,W. ; Schoner,A. ; Pensl,G. ; Suttrop,W. ; Choyke,W.J. ; Stein,R. ; Leibenzeder,S.
出版情報: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.495-500,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 117-118
7.

国際会議録
国際会議録
7. Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC
Itoh,H. ; Troffer,T. ; Pensl,G.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.685-688,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
8.

国際会議録
国際会議録
8. Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competiticn Epitaxy
Frank,T. ; Troffer,T. ; Pensl,G. ; Nordell,N. ; Karlsson,S. ; Schoner,A.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.681-684,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
9.

国際会議録
国際会議録
9. Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
Muller,St.G. ; Eckstein,R. ; Hartung,W. ; Hofmann,D. ; Kolbl,M. ; Pensl,G. ; Schmitt,E. ; Schmitt,E.J. ; Weber,A.-D. ; Winnacker,A.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.33-36,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
10.

国際会議録
国際会議録
10. Oxygen-Related Defect Centers in 4H Silicon Carbide
Dalibor,T. ; Pensl,G. ; Yamamoto,T. ; Kimoto,T. ; Matsunami,H. ; Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.553-556,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268