1.

国際会議録
国際会議録
1. Laser Annealing for Ultra-Shallow Junction Formation in Advanced CMOS
Surdeanu, R. ; Ponomarev, Y.V. ; Cerutti, R. ; Pawlak, B.J. ; Nanver, L.K. ; Hoflijk, I. ; Stolk, P.A. ; Dachs, C.J.J. ; Verheijen, M.A. ; Kaiser, M. ; Hopstaken, M.J.P. ; van Berkum, J.G.M. ; Roozeboom, F. ; Lindsay, R.
出版情報: Rapid thermal and other short-time processing technologies III : proceedings of the international symposium.  pp.413-428,  2002.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-11
2.

国際会議録
国際会議録
2. Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions
Colombeau, B. ; Smith, A.J. ; Cowern, N.E.B. ; Pawlak, B.J. ; Cristiano, F. ; Duffy, R. ; Claverie, A. ; Ortiz, C.J. ; Pichler, P. ; Lampin, E. ; Zechner, C.
出版情報: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.91-102,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 810
3.

国際会議録
国際会議録
3. The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
出版情報: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.281-286,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 809
4.

国際会議録
国際会議録
4. A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers
Vandervorst, W. ; Pawlak, B.J. ; Janssens, T. ; Brijs, B. ; Delhougne, R. ; Caymax, M. ; Loo, R.
出版情報: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.273-280,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 809
5.

国際会議録
国際会議録
5. The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
出版情報: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.423-430,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 810
6.

国際会議録
国際会議録
6. A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers
Vandervorst, W. ; Pawlak, B.J. ; Janssens, T. ; Brijs, B. ; Delhougne, R. ; Caymax, M. ; Loo, R.
出版情報: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.415-422,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 810
7.

国際会議録
国際会議録
7. 5 Effect of Amorphization on Activation and Deactivation of Boron in Source/Drain, Channel and Poly Gate
Pawlak, B.J. ; Duffy, R. ; Janssens, T. ; Vandenorst, W. ; Seven, S. ; Richard, O. ; Benedetti, A. ; Eyben, P. ; Colombeau, B. ; Cowern, N.E.B. ; Camilla-Castillo, R.A. ; Jones, K.S. ; Aboy, M.
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.43-49,  2005.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-05