1.

国際会議録
国際会議録
1. Chemical Mechanical Planarization of Ruthenium for Capacitor Bottom Electrode in DRAM Technology
Lee, S-H. ; Kang, Y-J ; Park, J-G. ; Lee, S-I.
出版情報: Thin film materials, processes, and reliability, plasma processing for the 100 nm node and copper interconnects with low-k inter-level dielectric films : proceedings of the international symposium.  pp.304-310,  2003.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-13
2.

国際会議録
国際会議録
2. STRUCTURE AND MORPHOLOGY OF 'D-DEFECTS' IN CZ Si
Park, J-G. ; Kirk, H. ; Cho, K-C. ; Lee, H-K. ; Lee, C-S. ; Rozgonyi, G.A.
出版情報: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.370-378,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-10
3.

国際会議録
国際会議録
3. Electrical Characterization of Slurry Particles and Their Interactions With Wafer Surfaces
Jeong, H-D. ; Kim, H-G. ; Lee, S-H. ; Moon, D-K. ; Park, J-G.
出版情報: Chemical mechanical polishing -- fundamentals and challenges : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.173-180,  2000.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 566
4.

国際会議録
国際会議録
4. Correlat ion of Substrate D-Defects in CZ Silicon with MOS Breakdown
Park, J-G. ; Kirk, H. ; Lee, C-S. ; Lee, H-K. ; Lee, D-M. ; Rozgonyi, G.A.
出版情報: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.57-71,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-1