Blank Cover Image

STUDIES OF In0.53Ga0.47As/InP SUPERLATTICES MIXING AND CONVERSION

著者名:
Schwarz, S. A.
Mei, P.
Hwang, D. M.
Schwartz, C. L.
Venkatesan, T.
Palmstrom, c. J.
Stoffel, N. G.
Bhat, R.
さらに 3 件
掲載資料名:
Advances in materials, processing, and devices in III-V compound semiconductors
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
144
発行年:
1989
開始ページ:
233
終了ページ:
238
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990173 [1558990178]
言語:
英語
請求記号:
M23500/144
資料種別:
国際会議録

類似資料:

1 国際会議録 STUDY OF THE CARRIER CONCENTRATION EFFECT ON Si ENHANCED AlGaAS/GaAS SUPERLATTICE MIXING

Mei, Ping, Venkatesan, T., Schwarz, S. A., Stoffel, N. G., Harbison, J. P., Florez, L. A.

Materials Research Society
7 国際会議録 ELECTRICAL PROPERTIES OF n- AND p-TYPE In0.53Ga0.47 As LAYERS FORMED BY ION IMPLANTATION AND RAPID THERMAL (FLASH) ANNEAL

L:iu, S. G., Narayan, S. Y., Magee, C. W., Wu, C. P., Kolondra, F., Paczkowski, J., Capewell, D.

Materials Research Society
2 国際会議録 Far Infrared Spectroscopy of In0.53Ga0.47As Quantum Wells on InP(100)

Rowell, N.L., Lockwood, D.J., Poole, P.J., Yu, G.

Materials Research Society
8 国際会議録 *INTERFACIAL MICROSTRUCTURE AND CARRIER CONDUCTION PROCESS IN Pt/Ti OHMIC CONTACT TO p-In0.53Ga0.47As FORMED BY RAPID THERMAL PROCESSING

Chu, S. N. G., Katz, A., Boone, T., Thomas, P. M., Riggs, V. G., Dautremont-Smith, W. C., Johnson Jr., W. D.

Materials Research Society
3 国際会議録 Te INDUCED A1As/GaAs SUPERLATTICE MIXING

Mei, P., Schwarz, S.A., Venkatesan, T., Schwartz, C.L., Colas, E.

Materials Research Society
9 国際会議録 DEPTH-DEPENDENT MIXING OF AN AlAs-GaAs SUPERLATTICE BY ION IMPLANTATION

Schwarz, S.A., Venkatesan, T., Bhat, R., Koza, M., Yoon, H.W., Arakawa, Y., Mei, P.

Materials Research Society
4 国際会議録 Study of N-type Si delta doping on InP and In0.53Ga0.47As

Yan, J., Ru, G., Choa, F.-S.

SPIE - The International Society of Optical Engineering
10 国際会議録 DEFECTS RELATED TO MIXING BEHAVIOR OF HIGHLY SILICON-DOPED GaAs/A1As SUPERLATTICES

Theodore, N. D., Carter, C. B., Mei, P., Schwarz, S.A., Harbison, J. P., Venkatesan, T.

Materials Research Society
5 国際会議録 Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy

Podor,B., Vignaud,D., Tiginyanu,I. M., Csontos,L., Ursaki,V. V., Shontya,V. P.

SPIE-The International Society for Optical Engineering
11 国際会議録 Photocurrent enhancement in In0.53Ga0.47As solar cells grown on InP/SiO2/Si transferred epitaxial templates

J. M. Zahler, K. Tanabe, C. Ladous, T. Pinnington, F. D. Newman, H. A. Atwater

SPIE - The International Society of Optical Engineering
6 国際会議録 Shallow and Low-Resistive Ohmic Contacts to p-In0.53Ga0.47As Based on Pd/Au and Pd/Sb Metallizations

Ressel, P., Wang, L. C., Park, M. H., Leech, P. W., Reeves, G. K., Kuphal, E.

MRS - Materials Research Society
12 国際会議録 Sensitivity and stability of IR photocathodes based on in 0.53 Ga0.47As/InP heterostructures with Schottky barrier intended for streak tubes

Nolle,E.L., Prokhorov,A.M., Sadofyev,Yu.G., Schelev,M.Ya., Senkov,V.M., Vulis,Yu.D.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12