1.

国際会議録
国際会議録
1. Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs
Agarwal, A.K. ; Krishnaswami, S. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J. ; Geil, B.R ; Katsis, D. ; Scozzie, C.J. ; Stahlbush, R.E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1409-1412,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. 4H-SiC DMOSFETs for High Speed Switching Applications
Ryu, S. H. ; Krishnaswami, S. ; Das, M. ; Richmond, J. ; Agarwal, A. ; Palmour, J. ; Scofield, J.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.797-800,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
3.

国際会議録
国際会議録
3. Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC
Ryu, S.-H. ; Agarwal, A. ; Richmond, J.T. ; Das, M.K. ; Lipkin, L.A. ; Palmour, J. ; Saks, N. ; Williams, J.R.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1195-1198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
4.

国際会議録
国際会議録
4. 5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm2
Sugawara, Y. ; Asano, K. ; Takayama, D. ; Ryu, S. ; Singh, R. ; Palmour, J. ; Hayashi, T.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1199-1202,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
5.

国際会議録
国際会議録
5. 1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs
Krishnaswami, S. ; Agarwal, A. ; Capell, C. ; Richmond, J. ; Ryu, S. H. ; Palmour, J. ; Balachandran, S. ; Chow, T. P. ; Bayne, S. ; Geil, B. ; Jones, K. A. ; Scozzie, C.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.901-904,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
6.

国際会議録
国際会議録
6. SiC BJT Technology for Power Switching and RF Applications
Agarwal, A. ; Ryu, S.H. ; Capell, C. ; Richmond, J. ; Palmour, J. ; Bartlow, H. ; Chow, P. ; Scozzie, S. ; Tipton, W. ; Baynes, S. ; Jones, K.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1141-1144,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
7.

国際会議録
国際会議録
7. High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
Muller, St.G. ; Brady, M.F. ; Brixius, W.H. ; Fechko, G. ; Glass, R.C. ; Henshall, D. ; Hobgood, H.M. ; Jenny, J.R. ; Leonard, R. ; Malta, D. ; Powell, A. ; Tsvetkov, V.F. ; Allen, S.T. ; Palmour, J. ; Carter, C.H., Jr.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.23-28,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
8.

国際会議録
国際会議録
8. High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
Muller, St.G. ; Brady, M.F. ; Brixius, W.H. ; Fechko, G. ; Glass, R.C. ; Henshall, D. ; Hobgood, H.M. ; Jenny, J.R. ; Leonard, R. ; Malta, D. ; Powell, A. ; Tsvetkov, V.F. ; Allen, S.T. ; Palmour, J. ; Carter, C.H.,Jr.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.23-28,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
9.

国際会議録
国際会議録
9. Development of 10 kV 4H-SiC Power DMOSFETs
Ryu, S.H. ; Agarwal, A. ; Krishnaswami, S. ; Richmond, J. ; Palmour, J.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1385-1388,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460