1.

国際会議録
国際会議録
1. Simulation Study of High-k Materials for SiC Trench MOSFETs
P. Tappin ; R. Mahapatra ; N.G. Wright ; P. Bhatnagar ; A. Horsfall
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.839-842,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. High Temperature Characterisation of 4H-SiC VJFET
P. Bhatnagar ; N.G. Wright ; A. Horsfall ; K.V. Vassilevski ; C.M. Johnson ; M.J. Uren ; K.P. Hilton ; A.G. Munday ; A.J. Hydes
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.799-802,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes
P. Bhatnagar ; N.G. Wright ; A. Horsfall ; C.M. Johnson ; M.J. Uren ; K.P. Hilton ; A.G. Munday ; A.J. Hydes
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.987-990,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557