Blank Cover Image

Study of Highly Strained Single InAs/In0.53Ga0.47As Quantum Wells from Phonon Modes by Raman Scattering

著者名:
掲載資料名:
Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
379
発行年:
1995
開始ページ:
351
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992825 [1558992820]
言語:
英語
請求記号:
M23500/379
資料種別:
国際会議録

類似資料:

1 国際会議録 Investigation of Interface Abruptness in Strained InAs/In0.53Ga0.47As Quantum Wells

Bruni,M.R., Gambacorti,N., Kaciulis,S., Mattogno,G., Simeone,M.G., Viticoli,S.

Trans Tech Publications
7 国際会議録 Multiple Cations Interdiffusion in In0.53Ga0.47As/In0.52Al0.48As Quantum Well

Chan, Y., Shiu, W. C., Tsui, W. K., Li, E. Herbert

MRS - Materials Research Society
2 国際会議録 Far Infrared Spectroscopy of In0.53Ga0.47As Quantum Wells on InP(100)

Rowell, N.L., Lockwood, D.J., Poole, P.J., Yu, G.

Materials Research Society
8 国際会議録 Study of N-type Si delta doping on InP and In0.53Ga0.47As

Yan, J., Ru, G., Choa, F.-S.

SPIE - The International Society of Optical Engineering
3 国際会議録 Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy

Podor,B., Vignaud,D., Tiginyanu,I. M., Csontos,L., Ursaki,V. V., Shontya,V. P.

SPIE-The International Society for Optical Engineering
9 国際会議録 Sensitivity and stability of IR photocathodes based on in 0.53 Ga0.47As/InP heterostructures with Schottky barrier intended for streak tubes

Nolle,E.L., Prokhorov,A.M., Sadofyev,Yu.G., Schelev,M.Ya., Senkov,V.M., Vulis,Yu.D.

SPIE-The International Society for Optical Engineering
4 国際会議録 STUDIES OF In0.53Ga0.47As/InP SUPERLATTICES MIXING AND CONVERSION

Schwarz, S. A., Mei, P., Hwang, D. M., Schwartz, C. L., Venkatesan, T., Palmstrom, c. J., Stoffel, N. G., Bhat, R.

Materials Research Society
10 国際会議録 Shallow and Low-Resistive Ohmic Contacts to p-In0.53Ga0.47As Based on Pd/Au and Pd/Sb Metallizations

Ressel, P., Wang, L. C., Park, M. H., Leech, P. W., Reeves, G. K., Kuphal, E.

MRS - Materials Research Society
5 国際会議録 HIGH SPEED InAs/AlSb AND In0.53Ga0.47As/AlAs RESONANT TUNNELING DIODES

Chow, D.H., Schulman, J.N., Ozbay, E., Bloom, D.M.

Materials Research Society
11 国際会議録 STUDIES OF RECOMBINATION TRANSFER IN ALLOYS AND THIN QUANTUM WELLS OF Ga0.47In0.53As/InP USING THE OPTICALLY DETECTED IMPACT IONIZATION TECHNIQUE

Omling, P.

Materials Research Society
6 国際会議録 MICROSTRUCTURE, STRESS AND ELECTRICAL PROPERTIES OF THE HIGHLY STABLE W/p+-In0.53Ga0.47As OHMIC CONTACTS

Katz, A., Maher, D., Thomas, P.M., Weir, B.E., Dautremont-Smith, W.C., Kimerling, L.C.

Materials Research Society
12 国際会議録 TEMPERATURE DEPENDENT QUENCHING MECHANISMS OF THE LUMINESCENCE OF InGaAs/GaAs STRAINED QUANTUM WELLS

Martelli, F., D’Ottavi, A., Catania, B., Bruni, M.R., Simeone, M.G., Zugarini, M.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12