1.

国際会議録
国際会議録
1. Characterization of MechaDically Polished Surfaces of Single Crystalline 6H-SiC
Kanaya,M. ; Yashiro,H. ; Ohtani,N. ; Katsuno,M. ; Takahashi,J. ; Shinoyama,S.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.359-362,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC
Ohtani,N. ; Katsuno,M. ; Takahashi,J. ; Yashiro,H. ; Kanaya,M. ; Shinoyama,S.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.49-52,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. Etching Kinetics of α-SiC Single Crystals by Molten KOH
Katsuno,M. ; Ohtani,N. ; Takahashi,J. ; Yashiro,H. ; Kanaya,M. ; Shinoyama,S.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.837-840,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
4.

国際会議録
国際会議録
4. Site Identification of 6H-SiC Using RBS/Channeling Technique
Satoh,M. ; Okamoto,K. ; Iwata,Y. ; Kuriyama,K. ; Kanaya,M. ; Ohtani,N.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.441-444,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
5.

国際会議録
国際会議録
5. Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC
Takahashi,J. ; Ohtani,N. ; Katsuno,M. ; Shinoyama,S.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.25-28,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268