1.

国際会議録
国際会議録
1. Magneto-Optical and EPR Investigation of Ionised DX Centers in Te-Doped AlxGa1-xAs
Pinheiro,M.V.B. ; Linde,M. ; Ohkura,H. ; Spaeth,J.-M.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1085-1090,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201
2.

国際会議録
国際会議録
2. A plausible evidence of the existence of deep acceptors in Si S-doped AlGaAs
Takarabe,K. ; Okada,N. ; Ohmura,K. ; Ohkura,H.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1299-1302,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263