1.

国際会議録
国際会議録
1. 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
Kojima, K. ; Okumura, H. ; Kuroda, S. ; Arai, K. ; Ohi, A. ; Akinaga, H.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.93-96,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
2.

国際会議録
国際会議録
2. Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum
Ohi, A. ; Ohshima, T. ; Yoshikawa, M. ; Lee, K. K. ; Iwami, M. ; Itoh, H.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.831-834,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
3.

国際会議録
国際会議録
3. Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
Ohshima, T. ; Lee, K.K. ; Ohi, A. ; Yoshikawa, M. ; Itoh, H.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1093-1096,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
4.

国際会議録
国際会議録
4. Performance of Pt Catalysts Supported on SiC-DPF
Oi-Uchisawa, J. ; Obuchi, A. ; Wang, S. ; Nanba, T. ; Ohi, A.
出版情報: Science and technology in catalysis 2002 : proceedings of the Fourth Tokyo Conference on Advanced Catalytic Science and Technology, Tokyo, July 14-19, 2002.  pp.465-466,  2003.  Amsterdam.  Elsevier
シリーズ名: Studies in surface science and catalysis
シリーズ巻号: 145
5.

国際会議録
国際会議録
5. Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum
Ohi, A. ; Ohshima, T. ; Yoshikawa, M. ; Lee, K.K. ; Iwami, M. ; Itoh, H.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.831-834,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
Ohshima, T. ; Lee, K. K. ; Ohi, A. ; Yoshikawa, M. ; Itoh, H.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1093-1096,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393