1.

国際会議録
国際会議録
1. Effect of a Gas Pressure on the Growth Rate of AlN Layer
E.N. Mokhov ; A.A. Wolfson ; O.P. Kazarova
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.107-110,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Synchrotron X-Ray Study on Crack Prevention in AlN Crystals Grown on Gradually Decomposing SiC Substrates
T.S. Argunova ; M.Y. Gutkin ; O.P. Kazarova ; E.N. Mokhov ; S.S. Nagalyuk
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.1011-1014,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
3.

国際会議録
国際会議録
3. Effect of Neutron Irradiation on SiC Etching in KOH Melt
E.N. Mokhov ; O.P. Kazarova ; S.S. Nagalyuk
出版情報: Silicon Carbide and Related Materials 2016.  pp.291-294,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897
4.

国際会議録
国際会議録
4. Thermal and Lattice Misfit Stress Relaxation in Growing AlN Crystal with Simultaneous Evaporation of SiC Substrate
T.S. Argunova ; M.Y. Gutkin ; K.D. Shcherbachev ; S.S. Nagalyuk ; O.P. Kazarova ; E.N. Mokhov ; J.H. Je
出版情報: Silicon Carbide and Related Materials 2016.  pp.711-714,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897