Seed-Layer Deposition For Sub 0.25 Micron Cu Metallization Using A Line Cusp Magnetron Plasma Source

Seed-Layer Deposition For Sub 0.25 Micron Cu Metallization Using A Line Cusp Magnetron Plasma Source

著者名:

Wickramanayaka, S.

掲載資料名:

Materials, technology and reliability for advanced interconnects and low-k dielectrics : symposium held April 23-27, 2000, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

612

発行年:

2001

開始ページ:

D6.3

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558995208 [155899520X]

言語:

英語

請求記号:

M23500/612

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014200
シリーズID:	PA00000011
会議名:	Symposium on materials, technology and reliability for advanced interconnects and low-k dielectrics
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.23-2000.04.27

類似資料:

1 国際会議録 Grain Refinement of Al Cast by Novel Al-Al_2.5Cu_0.5Ti Refiner Fabricated by Cold Pressing K. Yamanaka, H. Sato, Y. Watanabe Trans Tech Publications	7 国際会議録 A Study of Transistor Optimization in a 0.25 Micron CMOS Flow Using Source/Drain and Silicide Process Modules and Their Interactions Vasanth, K., Apte, P., Davis, J., Saxena, S., Burch, R., Rao, S., Mozumder, P. K. MRS - Materials Research Society
2 国際会議録 Etching Sub-0.25 um Micron Dual Damascene Structures by High Density Plasmas Chaudhary, N., Cowley, A., Dobuzinsky, D. Electrochemical Society	8 国際会議録 Advanced LPCVD BPSG Deposition for Sub-0.25μm Microelectronic Fabrication Ilg, M., Kirchhoff, M., Nguyen, S. Electrochemical Society
3 国際会議録 Integration Challenges of Inorganic Low-K (K < 2.5) Materials With Cu for Sub-0.25)μm Multilevel Interconnects Blumenthal, R., Braekelmann, G., Cave, N. G., Conner, J., Crabtree, P., Defilippi, J., Denning, D., Farkas, J., … Materials Research Society	9 国際会議録 Study of wetting properties of Ti/TiN liners deposited by ion metal plasma PVD for low-temperature sub-0.25-ｦﾌm Al fill technology Hui,S., Ngan,K., Narasimhan,M.K., Hogan,B., Yao,G., Ramaswami,S. SPIE-The International Society for Optical Engineering
4 国際会議録 Integration Challenges of Inorganic Low-k (k ｡？2.5) Materials With Cu for Sub-0.25 ｦﾌm Multilevel Interconnects Yu, K. C., Defilippi, J., Tiwari, R., Sparks, T., Smith, D., Olivares, M., Selinidis, S., Zhang, J., Junker, K., … MRS - Materials Research Society	10 国際会議録 Statistical design of experimental analysis of TiN films deposited by ion metal plasma PVD for sub-0.25-ｦﾌm IC process applications Hui,S., Ngan,K., Narasimhan,M.K., Forster,J. SPIE-The International Society for Optical Engineering
5 国際会議録 A Highly Manufacturable Spacer Profile Solution for Void-Free Pre- Metal Dielectrics Gap-Fill in Sub-0.25 Micron Technology Yu, J., Vassiliev, V.Y, Pradeep, Y.R., Cuthbertson, A., Jain, A., Zou, G. Electrochemical Society	11 国際会議録 Integration of Multi-Level Copper Metallization into a High-Performance Sub-0.25 ｦﾌm Technology Venkatraman, R., Jain, A., Farkas, J., Mendonca, J., Hamilton, G., Capasso, C., Denning, D., Simpson, C., Rogers, B., … MRS - Materials Research Society
6 国際会議録 Magnetically Enhanced Dual Frequency Reactive Ion Etcher for Dielectric Etching Wickramanayaka, S., Miura, V., Nagakawa, V., Saga, V., Numasawa, V. Electrochemical Society	12 国際会議録 The Effect of Process Parameters on CVD Cu Seed Layer Deposition on Ru and Ta Under-layer H. Kim, Y. Kojima, N. Yoshii, H. Sato, S. Hosaka Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12