1.

国際会議録
国際会議録
1. ABSOLUTE PHOTOIONIZATION CROSS SECTIONS OF THE ACCEPTOR STATE LEVEL OF CHROMIUM IN INDIUM PHOSPHIDE
Bremond, G. ; Guillot, G. ; Nouailhat, A. ; Picoli, G.
出版情報: Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A..  pp.371-376,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 46
2.

国際会議録
国際会議録
2. A COMPARATIVE STUDY OF DIFFERENT RAPID ANNEALING TECHNIQUES ON ELECTRICALLY ACTIVE DEFECTS IN UNIMPLANTED GALLIUM ARSENIDE
Marrakchi, G. ; Guillot, G. ; Nouailhat, A.
出版情報: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.509-514,  1988.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 104
3.

国際会議録
国際会議録
3. THE DONOR STATE OF VANADIUM IN INDIUM PHOSPHIDE
Bremond, G. ; Nouailhat, A. ; Guillot, G. ; Deveaud, B. ; Lambert, B. ; Toudic, Y. ; Clerjaud, B. ; Naud, C.
出版情報: Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A..  pp.359-364,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 46