1.

国際会議録
国際会議録
1. Electrical Activation of B Implant in 6H-SiC
Valcheva,E. ; Paskova,T. ; Ivanov,I.S. ; Yakimova,R. ; Wahab,Q. ; Savage,S. ; Nordell,N. ; Hamis,C.I.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.705-708,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. AFM Study of In Situ Etching of 4H and 6H SiC Substrates
Karlsson,S. ; Nordell,N.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.363-366,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. 6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering
Paskova,T. ; Valcheva,E. ; Ivanov,I.G. ; Yakimova,R. ; Savage,S. ; Nordell,N. ; Harris,C.I.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.741-744,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
4.

国際会議録
国際会議録
4. Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC
Persson,P.O.A. ; Wahab,Q. ; Hultman,L. ; Nordell,N. ; Schoner,A. ; Rottner,K. ; Olsson,E. ; Linnarsson,M.K.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.413-416,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
5.

国際会議録
国際会議録
5. Growth of 4H and 6H SiC in Trenches and Around Stripe Mesas
Nordell,N. ; Karlsson,S. ; Konstantinov,A.O.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.131-134,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
6.

国際会議録
国際会議録
6. Thermostable Ohmic Contacts on p-Type SiC
Kassamakova,L. ; Kakanakov,R. ; Nordell,N. ; Savage,S.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.787-790,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
7.

国際会議録
国際会議録
7. Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC
Linnarsson,M.K. ; Janson,M. ; Schoner,A. ; Nordell,N. ; Karlsson,S. ; Svensson,B.G.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.761-764,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
8.

国際会議録
国際会議録
8. SiC Surface Engineering for High Voltage JFET Applications
Ivanov,P.A. ; Kon'kov,0.I. ; Konstantinov,A.O. ; Panteleev,V.N. ; Samsonova,T.P. ; Nordell,N. ; Karlsson,S. ; Harris,C.I.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1081-1084,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
9.

国際会議録
国際会議録
9. Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competiticn Epitaxy
Frank,T. ; Troffer,T. ; Pensl,G. ; Nordell,N. ; Karlsson,S. ; Schoner,A.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.681-684,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
10.

国際会議録
国際会議録
10. Ionization Rates and Critical Fields in 4H SiC Junction Devices
Konstantinov,A.O. ; Wahab,Q. ; Nordell,N. ; Lindefelt,U.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.513-516,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268