1.

国際会議録
国際会議録
1. ELECTRICAL PROPERTIES OF n- AND p-TYPE In0.53Ga0.47 As LAYERS FORMED BY ION IMPLANTATION AND RAPID THERMAL (FLASH) ANNEAL
L:iu, S. G. ; Narayan, S. Y. ; Magee, C. W. ; Wu, C. P. ; Kolondra, F. ; Paczkowski, J. ; Capewell, D.
出版情報: Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A..  pp.375-380,  1987.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 92
2.

国際会議録
国際会議録
2. Low-Loss, Broadened-Waveguide, High-Power 2-ｦﾌm AlGaAsSb/InGaAsSb/GaSb Separate Confinement Quantum-Well Lasers
Menna, R. J. ; Garbuzov, D. Z. ; Martinelli, R. U. ; Lee, H. ; York, P. K. ; Connolly, J. C. ; Narayan, S. Y.
出版情報: Infrared applications of semiconductors - materials, processing, and devices : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.  pp.91-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 450