1.

国際会議録
国際会議録
1. Mechanism of Current Leakage in Ni Schottky Diodes on Cubic GaN and AlxGa1-xN Epilayers
As, Donat J. ; Potthast, Stefan ; Fernandez, Jara ; Lischka, Klaus ; Nagasawa, Hiroyuki ; Abe, Masayuki
出版情報: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.283-288,  2006.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 892
2.

国際会議録
国際会議録
2. 3C-SiC Monocrystals Grown on Undulant Si(001) Substrates
Nagasawa, Hiroyuki ; Yagi, Kuniaki ; Kawahara, Takamitsu ; Hatta, Naoki
出版情報: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.47-58,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 742
3.

国際会議録
国際会議録
3. Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-Doped SiC
Pensl, Gerhard ; Ciobanu, Florin ; Krieger, Michael ; Laube, Michael ; Reshanov, Sergey ; Schmid, Frank ; Wagner, Gunter ; Nagasawa, Hiroyuki ; Schoner, Adolf
出版情報: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.163-174,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 742
4.

国際会議録
国際会議録
4. PROPERTIES OF SiC FILM AS X-RAY MASK MEMBRANE
Yamaguchi, Yoh-Ichi ; Annaka, Norimichi ; Shoki, Tsutomu ; Ameniya, Isao ; Nagasawa, Hiroyuki ; Kosuga, Hiroyuki ; Nagarekawa, Osamu
出版情報: Materials aspects of x-ray lithography : symposium held April 12-14, 1993, San Francisco, California, U.S.A..  pp.197-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 306