1.

国際会議録
国際会議録
1. Homoepitaxial Growth of Iron-Doped 4H-SiC by Bis-Trimethylsilylmethane and Ferrocene Precursors for Semi-Insulating Si
Song, H. K. ; Jeong, J. K. ; Kim, S. G. ; Urn, M. Y. ; Na, H. J. ; Jung, S. Y. ; Seo, H. S. ; Yim, J. H. ; Lee, J. B. ; Kim, H. J.
出版情報: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.582-586,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-06
2.

国際会議録
国際会議録
2. Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma
Kim, B. S. ; Jeong, J. K. ; Um, M. Y. ; Na, H. J. ; Song, I. B. ; Kim, H. J.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.953-956,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
3.

国際会議録
国際会議録
3. Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance
Na, H. J. ; Kim, H. J. ; Adachi, K. ; Kiritani, N. ; Tanimoto, S. ; Okushi, H. ; Arai, K.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1383-1386,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
4.

国際会議録
国際会議録
4. Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor
Jeong, J. K. ; Um, M. Y. ; Na, H. J. ; Kim, B. S. ; Song, I. B. ; Kim, H. J.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.267-270,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
5.

国際会議録
国際会議録
5. Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor
Song, H. K. ; Um, M. Y. ; Na, H. J. ; Kim, D. H. ; Song, I. B. ; Jung, S. Y. ; Jeong, J. K. ; Lee, J. B. ; Kim, H. J.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.233-236,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
6.

国際会議録
国際会議録
6. Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport
Um, M. Y. ; Song, H. K. ; Na, H. J. ; Kim, D. H. ; Song, I. B. ; Jung, S. Y. ; Jeong, J. K. ; Lee, J. B. ; Kim, H. J.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.103-106,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460