1.

国際会議録
国際会議録
1. Grain Size and Orientation Control in Lead-Free (Bi,La)4Ti3O12 Thin Film Deposited by Spin-On Method for High Density FeRAM Device
Y.M. Kim ; G.E. Jang ; N.K. Kim ; S.J. Yeom ; S.Y. Kweon
出版情報: Eco-materials processing and design VIII : ISEPD-8, proceedings of the 8th International Symposium on Eco-Materials Processing and Design, January 11-13, 2007, Kitakyushu, Japan.  pp.577-580,  2007.  Stafa-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 544-545
2.

国際会議録
国際会議録
2. Low Resistance Cathode Metallization and Die-Bonding in Silicon Carbide P-N Junction Diodes
T.H. Kim ; S.Y. Lee ; J.S. Lee ; D.I. Suh ; N.K. Cho ; W. Bahng ; N.K. Kim ; S.Y. Choi ; H.J. Kim ; S.K. Lee
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.717-720,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)
J.H. Moon ; K.Y. Cheong ; D.I. Eom ; H.K. Song ; J.H. Yim ; J.H. Lee ; H.J. Na ; W. Bahng ; N.K. Kim ; H.J. Kim
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.643-646,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
4.

国際会議録
国際会議録
4. Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy
J.H. Moon ; D.H. Kim ; H.K. Song ; J.H. Yim ; W. Bahng ; N.K. Kim ; K.S. Seo ; H.J. Kim
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.647-650,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
5.

国際会議録
国際会議録
5. Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics
W. Bahng ; H.J. Cheong ; I.H. Kang ; S.J. Kim ; S.C. Kim ; S.J. Joo ; N.K. Kim
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.595-598,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
6.

国際会議録
国際会議録
6. Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode
I.H. Kang ; W. Bahng ; S.J. Joo ; S.C. Kim ; N.K. Kim
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.663-666,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
7.

国際会議録
国際会議録
7. Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations
I.H. Kang ; W. Bahng ; S.C. Kim ; S.J. Joo ; N.K. Kim
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.823-826,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
8.

国際会議録
国際会議録
8. Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
I.H. Kang ; S.J. Joo ; W. Bahng ; S.C. Kim ; N.K. Kim
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1151-1154,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648