1.

国際会議録
国際会議録
1. Carrier Trapping and Thermal Effects in GaN-based High-electron Mobility Transistors
Dabiran, A.M. ; Osinsky, A. ; Chow, P.P. ; Zhang, Z. ; Madjar, A. ; Osinsky, S. ; Hwang, J.C.M. ; Fitch, R.C. ; Gillespie, J. ; Jessen, G. ; Moser, N. ; Crespo, A.
出版情報: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.380-385,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-06
2.

国際会議録
国際会議録
2. Dramatic Improvements in AIGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment
Moser, N. ; Fitch, R. ; Via, D. ; Crespo, A. ; Yannuzzi, M. ; Jessen, G. ; Gillespie, J. ; Luo, B. ; Ren, F. ; Abernathy, C. ; Pearton, S. ; Gila, B.
出版情報: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.57-67,  2003.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-11
3.

国際会議録
国際会議録
3. Effect of Silicon Nitride PECVD Growth on AlGaN/GaN HEMT Dispersion and Breakdown Characteristics
Fitch, R. ; Gillespie, J. ; Via, D. ; Agresta, D. ; Jenkins, T. ; Jessen, G. ; Moser, N. ; Crespo, A. ; Dabiran, A. ; Osinsk, A.
出版情報: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.459-464,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-06